FDB102 [BL Galaxy Electrical]

SILICON BRIDGE RECTIFIERS; 硅桥式整流器
FDB102
型号: FDB102
厂家: BL Galaxy Electrical    BL Galaxy Electrical
描述:

SILICON BRIDGE RECTIFIERS
硅桥式整流器

文件: 总2页 (文件大小:84K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GALAXY ELECTRICAL  
FDB101 --- FDB107  
BL  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 1.0 A  
SILICON BRIDGE RECTIFIERS  
FEATURES  
Rating to 1000V PRV  
DB - 1  
Surge overload rating to 30 Amperes peak  
Ideal for printed circuit board  
.255(6.5)  
.245(6.2)  
.310(7.9)  
.290(7.4)  
.350(8.9)  
.300(7.6)  
Reliable low cost construction utilizing molded  
plastic technique results in inexpensive product  
.365(9.3)  
.355(9.0)  
Lead solderable per MIL-STD-202 method 208  
Lead: silver plated copper, solderde plated  
.135(3.4)  
.155(2.9)  
Plastic material has UL flammabilityclassification  
94V-O  
.060(1.5)  
.165(4.2)  
.155(3.9)  
.020(.51)  
.016(.41)  
.205(5.2)  
.195(5.0)  
Polaritysymbols molded on body  
Weight: 0.016 ounces,0.45 grams  
inch(mm)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
FDB  
101  
FDB  
102  
FDB FDB FDB FDB  
FDB  
107  
UNITS  
103  
104  
105  
106  
V
V
V
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
Maximum average f orw ard  
100  
1000  
A
1.0  
IF(AV)  
Output current  
@TA=25  
Peak forw ard surge current  
8.3ms single half-sine-w ave  
superimposed on rated load  
A
V
IFSM  
30.0  
Maximum instantaneous f orw ard voltage  
at 1.0 A  
1.3  
VF  
IR  
A
μ
Maximum reverse current  
@TA=25  
10.0  
1.0  
mA  
at rated DC blocking voltage @TA=100  
Maximum reverse recovery time (Note1)  
Operating junction temperature range  
Storage temperature range  
trr  
TJ  
TSTG  
ns  
150  
250  
500  
- 55 ---- + 125  
- 55 ---- + 150  
www.galaxycn.com  
NOTE:1. Measured with IF=0.5A,IR=1A, I =0.25A.  
rr  
BLGALAXY ELECTRICAL  
1.  
Document Number 0287011  
RATINGS AND CHARACTERISTIC CURVES  
FDB101 --- FDB107  
FIG.1 -- PEAK FORWARD SURGE CURRENT  
FIG.2 -- FORWARD DERATING CURVE  
1.0  
30  
Resislive or  
24  
Inductive Load  
9.5mm  
8.3m s Single Half Sine W ave  
18  
12  
6
TJ=25  
PCB  
0.5  
COPPERPADS  
(13mm x 13mm)  
0
0
25  
50  
75  
100  
125  
150  
1
10  
100  
NUMBER OF CYCLES AT60HZ  
AMBIENT TEMPERATURE,  
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC  
FIG.4 -- TYPICAL REVERSE CHARACTERISTIC  
100  
30  
10  
10  
1.0  
0.1  
1.0  
TJ=25  
TJ=125  
Pulse Width  
=300uS  
0.1  
.01  
0.1  
0.3  
0.6  
0.9  
1.2  
1.5  
1.8  
0
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  
www.galaxycn.com  
BLGALAXY ELECTRICAL  
2.  
Document Number 0287011  

相关型号:

FDB102S

SILICON BRIDGE RECTIFIERS
BL Galaxy Ele

FDB102S

Voltage 50V ~ 1000V1.0 Amp Silicon Bridge Rectifiers
SECOS

FDB102S

Silicon Bridge Rectifiers
LGE

FDB103

SILICON BRIDGE RECTIFIERS
BL Galaxy Ele

FDB103

Silicon Bridge Rectifiers
LGE

FDB103S

SILICON BRIDGE RECTIFIERS
BL Galaxy Ele

FDB103S

Silicon Bridge Rectifiers
LGE

FDB103S

Voltage 50V ~ 1000V1.0 Amp Silicon Bridge Rectifiers
SECOS

FDB104

SILICON BRIDGE RECTIFIERS
BL Galaxy Ele

FDB104

Silicon Bridge Rectifiers
LGE

FDB104S

SILICON BRIDGE RECTIFIERS
BL Galaxy Ele

FDB104S

Silicon Bridge Rectifiers
LGE